IMPATT DIODE QUASI-STATIC LARGE SIGNAL MODEL.DECKER DR.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 469-479; BIBL. 15 REF.Article

TEMPERATURE DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON.DECKER DR; DUNN CN.1976; J. ELECTRON. MATER.; U.S.A.; DA. 1976; VOL. 4; NO 3; PP. 527-547; BIBL. 2 P.Article

MMIC'S THE NEXT GENERATION OF MICROWAVE COMPONENTSCH'EN DR; DECKER DR.1980; MICROWAVE J.; USA; DA. 1980; VOL. 23; NO 5; PP. 67-78; 7 P.; BIBL. 5 REF.Article

YIELD CONSIDERATIONS FOR ION-IMPLANTED GAAS MMIC'SADITYA GUPTA; PETERSEN WC; DECKER DR et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 1; PP. 16-20; BIBL. 3 REF.Article

A MONOLITHIC GAAS DC TO 2-GHZ FEEDBACK AMPLIFIERPETERSEN WC; ADITYA GUPTA; DECKER DR et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 1; PP. 27-29; BIBL. 1 REF.Article

YIELD CONSIDERATIONS IN THE DESIGN AND FABRICATION OF GAAS MMICSGUPTA AK; PETERSEN WC; DECKER DR et al.1982; MICROWAVE JOURNAL; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 11; PP. 77-84; 7 P.; BIBL. 6 REF.Article

A MONOLITHIC GAAS DC TO 2-GHZ FEEDBACK AMPLIFIERPETERSEN WC; ADITYA GUPTA; DECKER DR et al.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 27-29; BIBL. 1 REF.Article

A DIAGNOSTIC PATTERN FOR GAAS FET MATERIAL DEVELOPMENT AND PROCESS MONITORINGIMMORLICA AA JR; DECKER DR; HILL WA et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2285-2291; BIBL. 19 REF.Article

MMIC LINEAR AMPLIFIERS. DESIGN AND FABRICATION TECHNIQUESCH'EN DR; DECKER DR; PETERSEN WC et al.1981; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1981; VOL. 24; NO 3; PP. 39-50; 7 P.; BIBL. 10 REF.Article